Witryna8 lut 2024 · Two-dimensional α-In2Se3 has drawn broad attention due to its high photoresponse and unique room-temperature interlocked in-plane and out-of-plane ferroelectricity with an ultralow switching... WitrynaAbstract. High-quality γ-In 2 Se 3 thin films and a γ-In 2 Se 3 /p-Si heterojunction were prepared using pulse laser deposition (PLD). The band offset of this heterojunction was studied by XPS and the band structure was found to be type II structure. The valence band offset (Δ E v) and the conduction band offset (Δ E c) of the heterojunction were …
Self-Assembly High-Performance UV-vis-NIR Broadband β-In
WitrynaIn this work, we present the assembly of a γ-In2Se3/GaAs heterostructure-based photodetector linear array composed of 1 × 10 device units. The layered γ-In2Se3 films with a well-defined pattern are deposited directly onto a planar GaAs substrate via radio-frequency (RF) magnetron sputtering deposition assist Witryna21 sie 2024 · The γ-In 2 Se 3 /p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable … immobilised enzymes practical
In2Se3 Visible/Near-IR Photodetector With Observation of Band …
Witryna21 sie 2024 · The γ-In 2 Se 3 /p-Si heterojunction photodetector has high responsivity under UV to visible light illumination. The heterojunction exhibits highly stable photodetection characteristics with an ultrafast response/recovery time of 15/366 μs. ... High-quality γ-In2Se3 thin films and a γ-In2Se3/p-Si heterojunction were prepared … Witryna10 kwi 2024 · Here, we demonstrate a mixed-dimensional WS2/WSe2/p-Si unipolar barrier photodetector, in which 2D WS2 acts as the photon absorber, atomically thin … Witryna16 lip 2024 · With applying the tensile strain of 0.433%, the photocurrent of the photodetector can be enhanced by about 18 times. Furthermore, the photodetectors … immobiliser code of with cab